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2019
1. Seokjung Yun, Hoon Kim, Min-Ho Kang, Myungsoo Seo, Hwang-Pill Kim, Seongwoo Cho, Wook Jo, Yang-Kyu Choi and Seungbum Hong, "Visualization of the domain structure and switching properties of Hf0.5Zr0.5O2 at various annealing temperatures for ferroelectric field effect transistors", Joint ISAF-ICE-EMF-IWPM-PFM Meeting 2019, Lausanne, Switzerland, Jul. 14-20, 2019. [PDF]