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NOBEL (Nano Oriented Bio-Electronic Lab.) persues commercial development of nano-bio electrical devices based on reliable silicon manufacturing techniques with new structure, new material, new technology. NOBEL developed Double-gate FinFET, silicon MOSFET, first in the world and keep a world record of smallest semiconductor device with 15nm gate length Double-gate FinFET in 2001. The FinFET technology which is developed first in university transferred to top semiconductor companies (Samsung, Intel, IBM, AMD, TI, Motorola, TSMC). This is successful industry-university co-work model. Many nanofabrication techniques have developed in the process of making sub-10nm structure and every techniques have infinite possibilities. NOBEL is developing many devices using these techniques.